Here we report the electronic structure of Zinc Telluride (ZnTe) compound. The theoretical photoemission (PES) spectrum at = 21.2eV shows four distinct structures with peaks at –2.8eV, –5.1eV, –9.7eV and –16.6eV. These structures are interpreted to be associated with the density of states features on the basis of the results of band structure calculation. Hence, peak at –2.8eV arises from L3, the peak at –5.1eV comes from X5, the peak at –9.7eV arises from X3 and the peak at –16.6eV arises from L1. The PES energy level difference for ZnTe fell within the range –0.5 to –7.5eV indicating that they can be used for the development of electronic devices. The energies of specific electronic states in the band structure of ZnTe investigated showed that it could be used for the development of solid-state devices.